Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Abstract

Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.

References in corpus (28)

• Van der Waals heterostructures
• 2D materials and van der Waals heterostructures
• Field-effect tunneling transistor based on vertical graphene heterostructures
• Chaotic Dirac billiard in graphene quantum dots
• Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
• Hunting for Monolayer Boron Nitride: Optical and Raman Signatures
• Atomically thin boron nitride: a tunnelling barrier for graphene devices
• Resonant tunnelling and negative differential conductance in graphene transistors
• Sequential Edge-Epitaxy in 2D Lateral Heterostructures
• Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
• Tunable Graphene Single Electron Transistor
• Graphene bubbles on a substrate : Universal shape and van der Waals pressure
• Tuning of energy levels and optical properties of graphene quantum dots
• Quantum Hall Drag of Exciton Superfluid in Graphene
• Tunable Coulomb blockade in nanostructured graphene
• Epitaxial graphene quantum dots for high-performance THz bolometers
• Single-electron tunneling in InP nanowires
• Electron-Hole Crossover in Graphene Quantum Dots
• The Fock-Darwin States of Dirac Electrons in Graphene-based Artificial Atoms
• Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
• Evidence for defect-mediated tunneling in hexagonal boron nitride-based junctions
• Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
• Probing relaxation times in graphene quantum dots
• Simplified model for the energy levels of quantum rings in single layer and bilayer graphene
• Signatures of phonon and defect-assisted tunneling in planar metal-hexagonal boron nitride-graphene junctions
• Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
• Asymmetric Electric Field Screening in van der Waals Heterostructures
• Non-monotonic spin relaxation and decoherence in graphene quantum dots with spin-orbit interactions

Cited by in corpus (5)

• Nanomaterials for Quantum Information Science and Engineering
• Inlaid ReS2 Quantum Dots in Monolayer MoS2
• Twisted monolayer and bilayer graphene for vertical tunneling transistors
• Using graphene conductors to enhance the functionality of atom-chips
• Exploration of stable atomic configurations in graphene-like BCN systems by Bayesian optimization