activity
20092017
most citedSingle-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

166 citations · 449 across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.mtrl-sci2017★ 1 cited

Growth and electronic properties of nanolines on TiO2-terminated SrTiO3(001) surfaces

W. Yan, W. Sitaputra, M. Skowronski +1

Surfaces of homoepitaxially grown TiO2-terminated SrTiO3(001) were studied in situ with scanning tunneling microscopy and spectroscopy. By controlling the Ti/Sr ratio, two-dimensio…

cond-mat.mes-hall2016★ 24 cited

Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy

P. C. Mende, Q. Gao, A. Ismach +5

The thickness and interfacial geometry of hexagonal boron nitride (hBN) films grown by chemical vapor deposition on polycrystalline nickel foils is studied using low-energy electro…

cond-mat.mes-hall2014★ 9 cited

Inelastic Effects in Low-Energy Electron Reflectivity of Two-dimensional Materials

Qin Gao, P. C. Mende, M. Widom +1

A simple method is proposed for inclusion of inelastic effects (electron absorption) in computations of low-energy electron reflectivity (LEER) spectra. The theoretical spectra are…

cond-mat.mes-hall2014★ 48 cited

Theory of Graphene-Insulator-Graphene Tunnel Junctions

S. C. de la Barrera, Qin Gao, R. M. Feenstra

Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-volt…

cond-mat.mes-hall2014★ 5 cited

Formation of a Buffer Layer for Graphene on C-face SiC{0001}

Guowei He, N. Srivastava, R. M. Feenstra

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in a Si-rich environment are studied using low-energy electron diffraction (LEED) and…

cond-mat.mes-hall2014★ 48 cited

Friedel Oscillation-Induced Energy Gap Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries

Kendal W. Clark, X. -G. Zhang, Gong Gu +4

We show that Friedel charge oscillation near an interface opens a gap at the Fermi energy for electrons with wave vectors perpendicular to the interface. If the Friedel gaps on two…

cond-mat.mes-hall2013★ 55 cited

Low-Energy Electron Reflectivity of Graphene on Copper and other Substrates

N. Srivastava, Qin Gao, M. Widom +4

The reflectivity of low energy electrons from graphene on copper substrates is studied both experimentally and theoretically. Well-known oscillations in the reflectivity of electro…

cond-mat.mes-hall2012★ 2 cited

Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments

Guowei He, N. Srivastava, R. M. Feenstra

The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interfac…

cond-mat.mtrl-sci2011★ 29 cited

Interface Structure of Graphene on SiC(000-1)

N. Srivastava, Guowei He, Luxmi +1

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interfa…

cond-mat.mes-hall2011★ 166 cited

Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

R. M. Feenstra, Debdeep Jena, Gong Gu

The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensi…

cond-mat.mtrl-sci2010★ 29 cited

Formation of Epitaxial Graphene on SiC(0001) using Vacuum or Argon Environments

Luxmi, N. Srivastava, R. M. Feenstra +1

The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectr…

cond-mat.mtrl-sci2010

Thickness monitoring of graphene on SiC using low-energy electron diffraction

P. J. Fisher, Luxmi, N. Srivastava +2

The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the g…

cond-mat.mtrl-sci2009★ 33 cited

Morphology of Graphene on SiC(000-1) Surfaces

Luxmi, P. J. Fisher, N. Srivastava +5

Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger ele…

cond-mat.mtrl-sci2009

Tunneling Spectroscopy of Graphene and related Reconstructions on SiC(0001)

Shu Nie, R. M. Feenstra

The 5x5, 6rt(3)x6rt(3)-R30deg, and graphene-covered 6rt(3)x6rt(3)-R30deg reconstructions of the SiC(0001) surface are studied by scanning tunneling microscopy and spectroscopy. For…