166 citations · 449 across the 14 of their papers we have counts for
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Growth and electronic properties of nanolines on TiO2-terminated SrTiO3(001) surfaces
W. Yan, W. Sitaputra, M. Skowronski +1
Surfaces of homoepitaxially grown TiO2-terminated SrTiO3(001) were studied in situ with scanning tunneling microscopy and spectroscopy. By controlling the Ti/Sr ratio, two-dimensio…
Interface Structure of Graphene on SiC(000-1)
N. Srivastava, Guowei He, Luxmi +1
Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interfa…
Formation of Epitaxial Graphene on SiC(0001) using Vacuum or Argon Environments
Luxmi, N. Srivastava, R. M. Feenstra +1
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectr…
Thickness monitoring of graphene on SiC using low-energy electron diffraction
P. J. Fisher, Luxmi, N. Srivastava +2
The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the g…
Morphology of Graphene on SiC(000-1) Surfaces
Luxmi, P. J. Fisher, N. Srivastava +5
Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger ele…
Tunneling Spectroscopy of Graphene and related Reconstructions on SiC(0001)
Shu Nie, R. M. Feenstra
The 5x5, 6rt(3)x6rt(3)-R30deg, and graphene-covered 6rt(3)x6rt(3)-R30deg reconstructions of the SiC(0001) surface are studied by scanning tunneling microscopy and spectroscopy. For…