Tunneling between Dilute GaAs Hole Layers

Abstract

We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but the peak amplitude is much larger than expected from the available hole band parameters. Data as a function of parallel magnetic field reveal additional anomalous features, including a recurrence of a zero-bias tunneling peak at very large fields. In a perpendicular magnetic field, we observe a robust and narrow tunneling peak at total filling factor ${\nu }_T=1$, signaling the formation of a bilayer quantum Hall ferromagnet.

Revised to include additional data, new discussions

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• Giant frictional drag in strongly interacting bilayers near filling factor one
• Interaction and coherence in 2D bilayers
• Pseudospin Transfer Torques in Semiconductor Electron Bilayers
• Role of the compensating current in the weak Josphson coupling regime: An extended study on excitonic Josephson junctions