Interaction and disorder in bilayer counterflow transport at filling factor one

Abstract

We study high mobility, interacting GaAs bilayer hole systems exhibiting counterflow superfluid transport at total filling factor $\nu =1$. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity (${\rho }_{xy}$) decreases at a given temperature, while the counterflow longitudinal resistivity (${\rho }_{xx}$), which is much larger than ${\rho }_{xy}$, hardly depends on density. On the other hand, a small imbalance in the layer densities can result in significant changes in ${\rho }_{xx}$ at $\nu =1$, while ${\rho }_{xy}$ remains vanishingly small. Our data suggest that the finite ${\rho }_{xx}$ at $\nu =1$ is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system.

4 pages, 3 figures

Cited by in corpus (4)

• Theory of Activated Transport in Bilayer Quantum Hall Systems
• Tunneling between Dilute GaAs Hole Layers
• Quantum disordering of the 111 state and the compressible-incompressible transition in quantum Hall bilayer systems
• Trial wavefunctions for the Goldstone mode in ν=1/2+1/2 quantum Hall bilayers