activity
20122018
most citedField-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

591 citations · 2.3k across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2018★ 48 cited

Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures

Kyounghwan Kim, Nitin Prasad, Hema C. P. Movva +7

We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal bor…

cond-mat.mes-hall2018★ 106 cited

Large effective mass and interaction-enhanced Zeeman splitting of -valley electrons in MoSe

Stefano Larentis, Hema C. P. Movva, Babak Fallahazad +6

We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic…

cond-mat.mes-hall2018★ 37 cited

Tunable Valley Populations in Hole-Doped Trilayer WSe

Hema C. P. Movva, Timothy Lovorn, Babak Fallahazad +7

We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe. Shubnikovde Haas oscillations show that trilayer holes p…

cond-mat.mes-hall2017★ 553 cited

Tunable Moiré Bands and Strong Correlations in Small-Twist-Angle Bilayer Graphene

Kyounghwan Kim, Ashley DaSilva, Shengqiang Huang +7

According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moiré patterns produced by small misalignment…

cond-mat.mes-hall2017★ 106 cited

Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe

Hema C. P. Movva, Babak Fallahazad, Kyounghwan Kim +5

We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe. The QHSs sequence transitions between predominantly even and predominantly odd f…

cond-mat.mes-hall2016★ 218 cited

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation

Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva +12

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dicha…