591 citations · 591 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2016
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation
Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva +12
To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dicha…
cond-mat.mes-hall2012★ 591 cited
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
S. Larentis, B. Fallahazad, E. Tutuc
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate mo…