Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

S. Larentis, B. Fallahazad, E. Tutuc

We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate mo…