1.4k citations · 4k across the 17 of their papers we have counts for
17 papers
Highly Valley-Polarized Singlet and Triplet Interlayer Excitons in van der Waals Heterostructure
Long Zhang, Rahul Gogna, G. William Burg +6
Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically li…
Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures
Kyounghwan Kim, Nitin Prasad, Hema C. P. Movva +7
We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal bor…
Moiré Excitons in Van der Waals Heterostructures
Kha Tran, Galan Moody, Fengcheng Wu +19
In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. Whil…
Strongly enhanced tunneling at total charge neutrality in double bilayer graphene-WSe heterostructures
G. William Burg, Nitin Prasad, Kyounghwan Kim +5
We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe barrier when the graphene bilayers are populated with carriers of…
Topologically Protected Helical States in Minimally Twisted Bilayer Graphene
Shengqiang Huang, Kyounghwan Kim, Dmitry K. Efimkin +6
In minimally twisted bilayer graphene, a moir{é} pattern consisting of AB and BA stacking regions separated by domain walls forms. These domain walls are predicted to support count…
Tunable Valley Populations in Hole-Doped Trilayer WSe
Hema C. P. Movva, Timothy Lovorn, Babak Fallahazad +7
We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe. Shubnikovde Haas oscillations show that trilayer holes p…
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures
G. William Burg, Nitin Prasad, Babak Fallahazad +8
We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe l…
Intra-Domain Periodic Defects in Monolayer MoS
Anupam Roy, Rudresh Ghosh, Amritesh Rai +8
We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor dep…
Tunable Moiré Bands and Strong Correlations in Small-Twist-Angle Bilayer Graphene
Kyounghwan Kim, Ashley DaSilva, Shengqiang Huang +7
According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moiré patterns produced by small misalignment…
Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe
Hema C. P. Movva, Babak Fallahazad, Kyounghwan Kim +5
We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe. The QHSs sequence transitions between predominantly even and predominantly odd f…
Structural and Electrical Properties of MoTe and MoSe Grown by Molecular Beam Epitaxy
Anupam Roy, Hema C. P. Movva, Biswarup Satpati +7
We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situ structural and chemical analys…
Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe: Landau level degeneracy, effective mass, and negative compressibility
Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim +5
We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall…
High-Mobility Holes in Dual-Gated WSe Field-Effect Transistors
Hema C. P. Movva, Amritesh Rai, Sangwoo Kang +6
We demonstrate dual-gated -type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe) using high work-function platinum source/drain contacts, and a h…
Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
Babak Fallahazad, Kayoung Lee, Sangwoo Kang +10
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphen…
Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures
Matthew Yankowitz, Stefano Larentis, Kyounghwan Kim +8
The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bond…
Band offset and negative compressibility in graphene-MoS2 heterostructures
S. Larentis, J. R. Tolsma, B. Fallahazad +4
We use electron transport to characterize monolayer graphene - multilayer MoS2 heterostructures. Our samples show ambipolar characteristics and conductivity saturation on the elect…
Chemical Potential and Quantum Hall Ferromagnetism in Bilayer Graphene
Kayoung Lee, Babak Fallahazad, Jiamin Xue +5
Bilayer graphene has a unique electronic structure influenced by a complex interplay between various degrees of freedom. We probe its chemical potential using double bilayer graphe…