94 citations · 169 across the 2 of their papers we have counts for
7 papers
Highly Valley-Polarized Singlet and Triplet Interlayer Excitons in van der Waals Heterostructure
Long Zhang, Rahul Gogna, G. William Burg +6
Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically li…
Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures
Kyounghwan Kim, Nitin Prasad, Hema C. P. Movva +7
We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal bor…
Moiré Excitons in Van der Waals Heterostructures
Kha Tran, Galan Moody, Fengcheng Wu +19
In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. Whil…
Strongly enhanced tunneling at total charge neutrality in double bilayer graphene-WSe heterostructures
G. William Burg, Nitin Prasad, Kyounghwan Kim +5
We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe barrier when the graphene bilayers are populated with carriers of…
Topologically Protected Helical States in Minimally Twisted Bilayer Graphene
Shengqiang Huang, Kyounghwan Kim, Dmitry K. Efimkin +6
In minimally twisted bilayer graphene, a moir{é} pattern consisting of AB and BA stacking regions separated by domain walls forms. These domain walls are predicted to support count…
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures
G. William Burg, Nitin Prasad, Babak Fallahazad +8
We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe l…