most citedField-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

591 citations · 591 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mes-hall2012★ 591 cited

Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

S. Larentis, B. Fallahazad, E. Tutuc

We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate mo…