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20102018
most citedField-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

591 citations · 2.9k across the 15 of their papers we have counts for

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cond-mat.mes-hall2010★ 101 cited

Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric

Babak Fallahazad, Seyoung Kim, Luigi Colombo +1

We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the c…