591 citations · 2.9k across the 15 of their papers we have counts for
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cond-mat.mes-hall2012★ 591 cited
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
S. Larentis, B. Fallahazad, E. Tutuc
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate mo…
cond-mat.mes-hall2012★ 54 cited
Quantum Hall Effect in Bernal Stacked and Twisted Bilayer Graphene Grown on Cu by Chemical Vapor Deposition
Babak Fallahazad, Yufeng Hao, Kayoung Lee +3
We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B)…