Insulator-Metal Transition and Magnetic Crossover in Bilayer Graphene
arXiv:2408.10954 · doi:10.1103/PhysRevB.111.125130
Abstract
In-plane magnetic fields offer a relatively unexplored opportunity to alter the band structure of stacks of 2D materials so that they exhibit desired physical properties. Here we show that an in-plane magnetic field combined with a transverse electric field can induce an insulator-metal (IM) transition in bilayer graphene. Our study of the magnetic response reveals that the orbital magnetic susceptibility changes from diamagnetic to paramagnetic around the transition point. We discuss several strategies to observe the IM transition, switch the diamagnetism, and more generally control the band structure of stacked 2D materials at experimentally accessible magnetic fields.
arXiv comment9 pages, 5 figures
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