In-plane magnetoelectric response in bilayer graphene

Abstract

A graphene bilayer shows an unusual magnetoelectric response whose magnitude is controlled by the valley-isospin density, making it possible to link magnetoelectric behavior to valleytronics. Complementary to previous studies, we consider the effect of static homogeneous electric and magnetic fields that are oriented parallel to the bilayer's plane. Starting from a tight-binding description and using quasi-degenerate perturbation theory, the low-energy Hamiltonian is derived including all relevant magnetoelectric terms whose prefactors are expressed in terms of tight-binding parameters. We confirm the existence of an expected axion-type pseudoscalar term, which turns out to have the same sign and about twice the magnitude of the previously obtained out-of-plane counterpart. Additionally, small anisotropic corrections to the magnetoelectric tensor are found that are fundamentally related to the skew interlayer hopping parameter ${\gamma }_4$. We discuss possible ways to identify magnetoelectric effects by distinctive features in the optical conductivity.

arXiv comment14 pages, 7 figures

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• Interlayer interaction controlling the properties of AB- and AA-stacked bilayer graphene-like BC${}_{14}$N and Si${}_2$C${}_{14}$
• Magnetoelectricity in two-dimensional materials
• Magic-angle twisted bilayer graphene under orthogonal and in-plane magnetic fields
• Synthetic magnetoelectric response of lattice bosonic insulators
• Insulator-Metal Transition and Magnetic Crossover in Bilayer Graphene