Observation of Valley-polarized Landau Levels in Strained Graphene

Abstract

In strained graphene, lattice deformation can create pseudo-magnetic fields and result in zero-field Landau level-like quantization. In the presence of an external magnetic field, valley-polarized Landau levels are predicted to be observed because the pseudo-magnetic fields are of opposite directions in the K and K' valleys of graphene. Here, we present experimental spectroscopic measurements by scanning tunneling microscopy of strained graphene on Rh foil. We direct observed valley splitting of the Landau level induced by the coexistence of the pseudo-magnetic fields and external magnetic fields. The observed result paves the way to exploit novel electronic properties in graphene through the combination of the pseudo-magnetic fields and the external magnetic fields.

3 Figures in main text and 3 figures in Supplementary Materials

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Cited by in corpus (43)

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• Valley Polarization and Inversion in Strained Graphene via Pseudo-Landau Levels, Valley Splitting of Real Landau Levels and Confined States
• Large-area, periodic, and tunable intrinsic pseudo-magnetic fields in low-angle twisted bilayer graphene
• Heterostrain engineering on twisted graphene bilayer around the first magic angle
• Strain Modulated Superlattices in Graphene
• Pseudomagnetic fields and triaxial strain in graphene
• Experimental evidence for orbital magnetic moments generated by moiré-scale current loops in twisted bilayer graphene
• Dispersive Landau levels and valley currents in strained graphene nanoribbons
• Bound States in Nanoscale Graphene Quantum Dots in a Continuous Graphene Sheet
• Valley polarization braiding in strained graphene
• Valley Hall Effect and Nonlocal Transport in Strained Graphene
• The tunnelling spectra of quasi-free-standing graphene monolayer
• Magnetic field-tunable valley-contrasting pseudomagnetic confinement in graphene
• Strain-induced pseudo-magnetic field in $\alpha -{\mathcal{T}}_3$ lattice
• Raise and collapse of strain-induced pseudo-Landau levels in graphene
• Straintronics beyond homogeneous deformation
• Phase diagrams and edge-state transitions in graphene with spin-orbit coupling and magnetic and pseudomagnetic fields
• Reverse strain-induced snake states in graphene nanoribbons
• Analytic solution to pseudo-Landau levels in strongly bent graphene nanoribbons
• Gap engineering in strained fold-like armchair graphene nanoribbons
• Quantum Monte Carlo study of honeycomb antiferromagnets under a triaxial strain
• Landau levels in curved space realized in strained graphene
• Realizing One-dimensional Metallic States in Graphene via Periodically Coupled Zeroth Pseudo-Landau Levels
• Creating and probing wide-bandgap nanoribbon-like structures in a continuous metallic graphene sheet
• Magnetic Phases in Periodically Rippled Graphene
• Switching valley filtered current directions in multi-terminal graphene systems
• Pseudo Landau levels, negative strain resistivity, and enhanced thermopower in twisted graphene nanoribbons
• Neural network-based recognition of multiple nanobubbles in graphene
• Pseudo-magnetic fields in square lattices
• Electron interactions in strain-induced zero-energy flat band in twisted bilayer graphene near the magic angle
• Fermionic symmetry-protected topological state in strained graphene
• Electronic transport in a two-dimensional superlattice engineered via self-assembled nanostructures
• Effective tunnel conductance and effective ac conductivity of randomly strained graphene
• Transport in strained graphene: Interplay of Abelian and axial magnetic fields
• Detecting degeneracy and subtle broken-symmetry states of graphene at nanoscale
• Electron localization in periodically strained graphene
• Corrugation induced stacking solitons with topologically confined states in gapped bilayer graphene
• Dynamical symmetry breaking, magnetization and induced charge in graphene: Interplay between magnetic and pseudomagnetic fields
• Sublattice polarization and filamentary superconductivity in strained graphene
• Flux-induced midgap states between strain-engineered flat bands