Dynamical symmetry breaking, magnetization and induced charge in graphene: Interplay between magnetic and pseudomagnetic fields
arXiv:1903.07180
Abstract
In this paper, we investigate the two competing effects of strains and magnetic fields in single-layer graphene to explore its impact on various phenomena of quantum field theory, such as induced charge density, magnetic catalysis, symmetry breaking, dynamical mass generation and magnetization. We show that the interplay between strains and magnetic fields produces not only a breaking of chiral symmetry, as it happens in QED, but also parity and time-reversal symmetry breaking. The last two symmetry breakings are related to the dynamical generation of a Haldane mass term. We find that it is possible to modify the magnetization and the dynamical mass independently for each valley, by strain and varying the external magnetic field. Furthermore, we discover that the presence of a non-zero pseudomagnetic field, unlike the magnetic one, allows us to observe an induced "vacuum" charge and a parity anomaly in strained graphene. Finally, because the combined effect of real and pseudomagnetic fields produces an induced valley polarization, the results presented here may provide new tools to design valleytronic devices.
15 pages, 3 figures
References in corpus (11)
- Ultrahigh electron mobility in suspended graphene
- Chiral tunneling and the Klein paradox in graphene
- Infrared spectroscopy of Landau levels in graphene
- Electromagnetic current correlations in reduced quantum electrodynamics
- Observation of Valley-polarized Landau Levels in Strained Graphene
- Pseudo-magnetic catalysis of the time-reversal symmetry breaking in graphene
- Dynamical mass generation in strongly coupled Quantum Electrodynamics with weak magnetic fields
- Nonlinear magnetization of graphene
- Dynamical Lorentz symmetry breaking in 3D and charge fractionalization
- Optimal number of terms in QED series and its consequence in condensed matter implementations of QED
- Induced fractional valley number in graphene with topological defects