Topological quantum criticality of the disordered Chern insulator

Abstract

We consider the two-dimensional topological Chern insulator in the presence of static disorder. Generic quantum states in this system are Anderson localized. However, topology requires the presence of a subset of critical states, with diverging localization length (the Chern insulator analog of the `center of the Landau band states' of the quantum Hall insulator.) We discuss geometric criteria for the identification of these states at weak disorder, and their extension into the regime of strong disorder by analytical methods. In this way, we chart a critical surface embedded in a phase space spanned by energy, topological control parameter, and disorder strength. Our analytical predictions are supplemented by a numerical analysis of the position of the critical states, and their multifractal properties.

arXiv comment13 pages, 6 figures

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• Disorder-induced delocalization and reentrance in a Chern-Hopf insulator
• Dephasing-induced Quantum Hall Criticality in the Quantum Anomalous Hall system
• Phase Transition of Topological Index driven by Dephasing