Towards half-metallic interfaces: the CoCrAl/InP contacts
arXiv:cond-mat/0408204 · doi:10.1088/0953-8984/16/45/022
Abstract
Although the interest on half-metallic Heusler alloys, susceptible to be used in spintronic applications, has considerably grown, their interfaces with semiconductors show very low spin-polarization. I identify mechanisms which can keep the high spin-polarization at the interface (more than 80% of the electrons at the Fermi level are of majority spin) although the half-metallicity is lost. The large enhancement of the Cr moment at the interface between a CrAl terminated CoCrAl(001) spacer and the InP(001) semiconductor weakens the effect of the interface states resulting in this high spin-polarization. On the other hand the CoCrAl/InP interfaces made up by a Co layer and either an In or a P one show a severe decrease of the Co spin moment but Cr in the subinterface layer is bulklike and the resulting spin-polarization is similar to the CrAl-based interfaces.
+ the Co/P and Co/In interfaces
References in corpus (2)
Cited by in corpus (9)
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- Spin-polarization and electronic properties of half-metallic Heusler alloys calculated from first-principles
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- Doping and disorder in the CoMnAl and CoMnGa half-metallic Heusler alloys
- Interface properties of the NiMnSb/InP and NiMnSb/GaAs contacts
- A review of the electronic and magnetic properties of tetrahedrally bonded half-metallic ferromagnets
- Engineering the electronic, magnetic and gap-related properties of the quinternary half-metallic Heusler alloys
- Role of defects and disorder in the half-metallic full-Heusler compounds