Influence of mixing the low-valent transition metal atoms (Y,Y=Cr,Mn,Fe) on the properties of the quaternary Co[YY]Z (Z=Al,Ga,Si,Ge,Sn) Heusler compounds
arXiv:cond-mat/0612194 · doi:10.1063/1.2714502
Abstract
We complement our study on the doping and disorder in CoMnZ compounds [I. Galanakis \textit{et al.}, Appl. Phys. Lett. \textbf{89}, 042502 (2006) and K. Özdogan \textit{et al.}, Phys. Rev. B \textbf{74}, (2006)] to cover also the quaterarny Co[YY]Z compounds with the lower-valent transition metals Y,Y being Cr, Mn or Fe and the sp atom Z being one of Al, Ga, Si, Ge, Sn. This study gives a global overview of the magnetic and electronic properties of these compounds since we vary both Y and Z elements. Our results suggest that for realistic applications the most appropriate compounds are the ones belonging to the families Co[MnCr]Z with irrespectively of the nature of the atoms since they combine high values of majority DOS at the Fermi level due to the presence of Cr, and half-metallicity with large band-gaps. On the other hand the presence of Fe lowers considerably the majority density of states at the Fermi level and when combined with an element belonging to the Si-column, it even can destroy half-metallicity.
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Cited by in corpus (6)
- Role of the conduction electrons in mediating exchange interactions in Heusler alloys
- 3d-electron induced magnetic phase transition in half-metallic semi-Heusler alloys
- Engineering the electronic, magnetic and gap-related properties of the quinternary half-metallic Heusler alloys
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