Spin injection from the Heusler alloy Co_2MnGe into Al_0.1Ga_0.9As/GaAs heterostructures

Abstract

Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co_2MnGe decays more rapidly with increasing temperature.

8 pages, 4 figures

References in corpus (3)

• Spintronics: Fundamentals and applications
• Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
• Dynamical Nuclear Polarization by Electrical Spin Injection in Ferromagnet-Semiconductor Heterostructures

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