Spin injection from perpendicular magnetized ferromagnetic $\delta$-MnGa into (Al,Ga)As heterostructures

Abstract

Electrical spin injection from ferromagnetic $\delta$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $\delta$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.

4 pages, 3 figures

References in corpus (4)

• Spintronics: Fundamentals and applications
• Spin injection from the Heusler alloy Co_2MnGe into Al_0.1Ga_0.9As/GaAs heterostructures
• Spin Injection and Relaxation in Ferromagnet-Semiconductor Heterostructures
• Electron Spin Dynamics and Hyperfine Interactions in Fe/Al_0.1Ga_0.9As/GaAs Spin Injection Heterostructures

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• Tailoring Magnetism of Perpendicularly Magnetized MnxGa Epitaxial Films on GaAs for Practical Applications
• Spin injection in Silicon at zero magnetic field
• Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
• Charge and spin transport in spin valves with anisotropic spin relaxation