Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector

Abstract

We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is achieved at zero magnetic field. Moreover the electroluminescence circular polarization is still about 8% at room temperature.

arXiv comment*Corresponding author: [email protected]

References in corpus (10)

• First-principles investigation of the very large Perpendicular Magnetic Anisotropy at Fe|MgO Interfaces
• Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
• Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
• Spin injection from the Heusler alloy Co_2MnGe into Al_0.1Ga_0.9As/GaAs heterostructures
• Spin Injection and Relaxation in Ferromagnet-Semiconductor Heterostructures
• Spin injection in Silicon at zero magnetic field
• Spin injection from perpendicular magnetized ferromagnetic $\delta$-MnGa into (Al,Ga)As heterostructures
• Electrical spin injection into p-doped quantum dots through a tunnel barrier
• Shot noise for resonant Cooper pair tunneling
• A spintronic source of circularly polarized single photons

Cited by in corpus (10)

• Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
• New spin injection scheme based on spin gapless semiconductors: A first-principles study
• Investigation of helicity-dependent photocurrent at room temperature from a Fe/x-AlOx/p-GaAs Schottky junction with oblique surface illumination
• Perpendicularly magnetized CoFeB multilayers with tunable interlayer exchange for synthetic ferrimagnets
• Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field
• Polarization response of spin-lasers under amplitude modulation
• Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures
• Ab-initio study of magneto-ionic mechanisms in ferromagnet/oxide multilayers
• Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure
• Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field