Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field
arXiv:2007.12054 · doi:10.1103/PhysRevMaterials.4.124603
Abstract
Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoFeB/MgO electrode, presenting perpendicular magnetic anisotropy (PMA). We observe a clear asymmetry of the photocurrent measured under respective right and left polarized light that follows the hysteresis of the magnetic layer. The amplitude of this asymmetry at zero magnetic field decreases with increasing temperatures and can be controlled with the bias. Polarization-resolved photoluminescence is detected in parallel while the device is operated as a photodetector. This demonstrates the multifunctional capabilities of the device and gives valuable insights into the spin relaxation of the electrons in the quantum dots.
References in corpus (10)
- Ultrafast spin-lasers
- Giant Stark effect in the emission of single semiconductor quantum dots
- Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
- Electrical Spin Pumping of Quantum Dots at Room Temperature
- Spin injection in Silicon at zero magnetic field
- Electrical spin injection into p-doped quantum dots through a tunnel barrier
- Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
- Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
- Electron Spin Dynamics and Hyperfine Interactions in Fe/Al_0.1Ga_0.9As/GaAs Spin Injection Heterostructures
- Investigation of helicity-dependent photocurrent at room temperature from a Fe/x-AlOx/p-GaAs Schottky junction with oblique surface illumination