677 citations · 3.1k across the 34 of their papers we have counts for
34 papers
Using Light to Polarize and Detect Electron Spins in Silicon
Xavier Marie, Delphine Lagarde, Andrea Balocchi +5
Despite decades of research, demonstration of all-optical detection and control of free electron spins in silicon remains elusive. Here, we directly probe the electron spin propert…
A systematic study of spin-dependent recombination in GaAsN as a function of nitrogen content
A. C. Ulibarri, R. Kothari, A. Garcia +5
A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reporte…
Anomalous ambipolar transport in depleted GaAs nanowires
H. Hijazi, D. Paget, A C. H. Rowe +7
We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ( cm doping le…
Enhancement of valley polarization at high photoexcited densities in MoS2 monolayers
Fabian Cadiz, Stefan Gerl, Takashi Taniguchi +1
We have investigated the steady-sate valley polarization and valley coherence of encapsulated MoS2 monolayer as a function of the temperature and the power density with a continuou…
Efficient valley polarization of charged excitons and resident carriers in MoS2 monolayers by optical pumping
Sangjun Park, Steve Arscott, Takashi Taniguchi +3
We investigate with polarized microphotoluminescence the optical pumping of the valley degree of freedom in charge-tunable MoS2 monolayers encapsulated with hexagonal boron nitride…
Imaging Seebeck drift of excitons and trions in MoSe2 monolayers
Sangjun Park, Bo Han, Caroline Boule +10
Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe monolayers encapsulated with hexagonal boron nitride (hBN). Under a…
Spin/Valley pumping of resident electrons in WSe2 and WS2 monolayers
Cedric Robert, Sangjun Park, Fabian Cadiz +14
Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excita…
Charge and spin transport over record distances in GaAs metallic n-type nanowires : II nonlinear charge transport
Hadi Hijazi, Daniel Paget, Guillaume Monier +6
We have investigated the photocarrier charge transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si(111) substr…
Charge and spin transport over record distances in GaAs metallic n-type nanowires : I photocarrier transport in a dense Fermi sea
Hadi Hijazi, Daniel Paget, Guillaume Monier +6
We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This wa…
Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field
Fabian Cadiz, Delphine Lagarde, Bingshan Tao +13
Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n dio…
Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface
H. Li, L. Martinelli, F. Cadiz +4
A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) mapping on statically deflected p-type silicon cantilevers is used to study the mechanic…
Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
F. Cadiz, A. Djeffal, D. Lagarde +18
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electro…
Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure
F. Cadiz, C. Robert, E. Courtade +9
We have combined spatially-resolved steady-state micro-photoluminescence (PL) with time-resolved photoluminescence (TRPL) to investigate the exciton diffusion in a WSe monol…
Optical spectroscopy of excited exciton states in MoS2 monolayers in van der Waals heterostructures
C. Robert, M. A. Semina, F. Cadiz +12
The optical properties of MoS2 monolayers are dominated by excitons, but for spectrally broad optical transitions in monolayers exfoliated directly onto SiO2 substrates detailed in…
Fine Structure and Lifetime of Dark Excitons in Transition Metal Dichalcogenide Monolayers
Cedric Robert, Thierry Amand, Fabian Cadiz +7
The intricate interplay between optically dark and bright excitons governs the light-matter interaction in transition metal dichalcogenide monolayers. We have performed a detailed…
Charged excitons in monolayer WSe: experiment and theory
E. Courtade, M. Semina, M. Manca +13
Charged excitons, or X-trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X they domi…
In-plane Propagation of Light in Transition Metal Dichalcogenide Monolayers: Optical Selection Rules
G. Wang, C. Robert, M. M. Glazov +8
The optical selection rules for inter-band transitions in WSe2, WS2 and MoSe2 transition metal dichalcogenide monolayers are investigated by polarization-resolved photoluminescence…
Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
F. Cadiz, E. Courtade, C. Robert +13
The strong light matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics ap…
Enabling valley selective exciton scattering in monolayer WSe through upconversion
M. Manca, M. M. Glazov, C. Robert +9
Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much strong…
Luminescence imaging of photoelectron spin precession during drift in p-type GaAs
V. Notot, D. Paget, A. C. H. Rowe +3
Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscill…
Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides
Fabian Cadiz, Cedric Robert, Gang Wang +13
The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are…
Excitonic properties of semiconducting monolayer and bilayer MoTe2
C. Robert, R. Picard, D. Lagarde +9
MoTe2 belongs to the semiconducting transition metal dichalcogenide family with some properties differing from the other well-studied members (Mo,W)(S,Se)2. The optical band gap is…
Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers
G. Wang, X. Marie, B. L. Liu +5
The direct gap interband transitions in transition metal dichalcogenides monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transition…
Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
Biswarup Guha, Felix Marsault, Fabian Cadiz +10
Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong in…