118 citations · 125 across the 5 of their papers we have counts for
15 papers
Enhancement of valley polarization at high photoexcited densities in MoS2 monolayers
Fabian Cadiz, Stefan Gerl, Takashi Taniguchi +1
We have investigated the steady-sate valley polarization and valley coherence of encapsulated MoS2 monolayer as a function of the temperature and the power density with a continuou…
Efficient valley polarization of charged excitons and resident carriers in MoS2 monolayers by optical pumping
Sangjun Park, Steve Arscott, Takashi Taniguchi +3
We investigate with polarized microphotoluminescence the optical pumping of the valley degree of freedom in charge-tunable MoS2 monolayers encapsulated with hexagonal boron nitride…
Imaging Seebeck drift of excitons and trions in MoSe2 monolayers
Sangjun Park, Bo Han, Caroline Boule +10
Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe monolayers encapsulated with hexagonal boron nitride (hBN). Under a…
Spin/Valley pumping of resident electrons in WSe2 and WS2 monolayers
Cedric Robert, Sangjun Park, Fabian Cadiz +14
Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excita…
Charge and spin transport over record distances in GaAs metallic n-type nanowires : II nonlinear charge transport
Hadi Hijazi, Daniel Paget, Guillaume Monier +6
We have investigated the photocarrier charge transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si(111) substr…
Charge and spin transport over record distances in GaAs metallic n-type nanowires : I photocarrier transport in a dense Fermi sea
Hadi Hijazi, Daniel Paget, Guillaume Monier +6
We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This wa…