Electrical Spin Pumping of Quantum Dots at Room Temperature
arXiv:cond-mat/0501759 · doi:10.1063/1.1890469
Abstract
We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid state semiconductor devices.
4 figures, accepted by Appl. Phys. Lett
References in corpus (6)
- Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
- Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
- Spin relaxation of conduction electrons in bulk III-V semiconductors
- Reduction Of Spin Injection Efficiency by Interface Spin Scattering
- Accuracy of circular polarization as a measure of spin polarization in quantum dot qubits
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Cited by in corpus (7)
- Nuclear spin physics in quantum dots: an optical investigation
- Electrical spin injection into p-doped quantum dots through a tunnel barrier
- Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
- Theory of quantum dot spin-lasers
- Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field
- Ballistic spin filtering across the ferromagnetic-semiconductor interface
- Determination of spin polarization in InAs/GaAs self-assembled quantum dots