Reduction Of Spin Injection Efficiency by Interface Spin Scattering

Abstract

We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering. An inverse correlation between spin-polarized electron injection efficiency and interface defect density is demonstrated for ZnMnSe/AlGaAs-GaAs spin-LEDs with spin injection efficiencies of 0 to 85%.

13 pages, 5 figures; submitted to PRL

References in corpus (2)

• Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
• Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

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• Determination of Interface Atomic Structure and Its Impact on Spin Transport Using Z-Contrast Microscopy and Density-Functional Theory
• Electrical Spin Pumping of Quantum Dots at Room Temperature
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• Proposal for detecting nodal-line semimetal surface-states with resonant spin-flipped reflection
• Spin and charge interconversion in Dirac semimetal thin films
• Spin accumulation in degenerate semiconductors near modified Schottky contact with ferromagnets
• Ballistic Spin Injection from Fe into ZnSe and GaAs with a (001), (111), and (110) orientation
• Spatial separation of spin currents in transition metal dichalcogenides