Giant Stark effect in the emission of single semiconductor quantum dots

Abstract

We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500 kV/cm, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy.

References in corpus (2)

• Tunable Indistinguishable Photons From Remote Quantum Dots
• Size-Dependence of the Wavefunction of Self-Assembled Quantum Dots

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