Static strain tuning of quantum dots embedded in a photonic wire
arXiv:1802.03165 · doi:10.1063/1.5025313
Abstract
We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection efficiency. Thanks to the geometry of the structure, we are able to shift the QD excitonic transition by more than 20 meV by using nano-manipulators to apply the stress. Moreover, owing to the strong transverse strain gradient generated in the structure, we can relatively tune two QDs located in the wire waveguide and bring them in resonance, opening the way to the observation of collective effects such as superradiance.
References in corpus (16)
- Long-distance quantum communication with atomic ensembles and linear optics
- Near optimal single photon sources in the solid state
- On-Demand Single Photons with High Extraction Efficiency and Near-Unity Indistinguishability from a Resonantly Driven Quantum Dot in a Micropillar
- Superradiance for atoms trapped along a photonic crystal waveguide
- Tunable Indistinguishable Photons From Remote Quantum Dots
- Strain-mediated coupling in a quantum dot-mechanical oscillator hybrid system
- Interference of Single Photons from Two Separate Semiconductor Quantum Dots
- The photonic trumpet: An efficient, broadband interface between a solid-state quantum emitter and a Gaussian beam
- Giant Stark effect in the emission of single semiconductor quantum dots
- Quantum dot opto-mechanics in a fully self-assembled nanowire
- Energy-tunable sources of entangled photons: a viable concept for solid-state-based quantum relays
- Strain-Tuning of the Optical Properties of Semiconductor Nanomaterials by Integration onto Piezoelectric Actuators
- A strain-tunable quantum dot embedded in a nanowire antenna
- Resonant driving of a single photon emitter embedded in a mechanical oscillator
- Large and uniform optical emission shifts in quantum dots externally strained along their growth axis
- Strain-gradient mapping of semiconductor quantum dots