Strain-gradient mapping of semiconductor quantum dots

Abstract

In the context of fast developing quantum technologies, locating single quantum objects embedded in solid or fluid environment while keeping their properties unchanged is a crucial requirement as well as a challenge. Such "quantum microscopes" have been demonstrated already for NV-centers embedded in diamond [1], and for single atoms within an ultracold gas [2]. In this work, we demonstrate a new method to determine non-destructively the position of randomly distributed semiconductor quantum dots (QDs) deeply embedded in a solid photonic waveguide. By setting the wire in an oscillating motion, we generate large stress gradients across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress [3-5] to infer their positions with an accuracy ranging from +/- 35 nm down to +/-1 nm for close-to-axis QDs.

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Cited by in corpus (9)

• Resonant driving of a single photon emitter embedded in a mechanical oscillator
• Inducing micromechanical motion by optical excitation of a single quantum dot
• Force sensing with nanowire cantilevers
• Optomechanical properties of GaAs/AlAs micropillar resonators operating in the 18 GHz range
• Static strain tuning of quantum dots embedded in a photonic wire
• Two-level system as topological actuator for nanomechanical modes
• Bistability of a slow mechanical oscillator coupled to a laser-driven two-level system
• Piezo-orbital backaction force in a rare-earth doped crystal
• Strain-induced exciton decomposition and anisotropic lifetime modulation in a GaAs micromechanical resonator