74 citations · 179 across the 7 of their papers we have counts for
7 papers
Spin-orbit torque magnetization switching in MoTe2/permalloy heterostructures
Shiheng Liang, Shuyuan Shi, Chuang-Han Hsu +6
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low powe…
Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
P. Barate, S. Liang, T. T. Zhang +16
An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is…
Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions
Can Xiao, Huawei Sun, Luming Cheng +14
Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of me…
Enhancement of ferroelectric performance in PVDF:Fe3O4 nanocomposite based organic multiferroic tunnel junctions
Xue Gao, Shiheng Liang, Anthony Ferri +16
We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 na…
Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
F. Cadiz, A. Djeffal, D. Lagarde +18
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electro…
Spin transport in molybdenum disulfide multilayer channel
S. H. Liang, Y. Lu, B. S. Tao +12
Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstr…
Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
S. Liang, T. T. Zhang, P. Barate +19
We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). T…