Interface properties of the NiMnSb/InP and NiMnSb/GaAs contacts
arXiv:cond-mat/0409333 · doi:10.1103/PhysRevB.71.214431
Abstract
We study the electronic and magnetic properties of the interfaces between the half-metallic Heusler alloy NiMnSb and the binary semiconductors InP and GaAs using two different state-of-the-art full-potential \textit{ab-initio} electronic structure methods. Although in the case of most NiMnSb/InP(001) contacts the half-metallicity is lost, it is possible to keep a high degree of spin-polarization when the interface is made up by Ni and P layers. In the case of the GaAs semiconductor the larger hybridization between the Ni- and As- orbitals with respect to the hybridization between the Ni- and P- orbitals destroys this polarization. The (111) interfaces present strong interface states but also in this case there are few interfaces presenting a high spin-polarization at the Fermi level which can reach values up to 74%.
arXiv comment9 pages, 9 figures
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- The fate of half-metallicity near interfaces: the case of NiMnSb/MgO and NiMnSi/MgO
- Revealing the nature of magnetic phases in the semi-Heusler alloy Cu0.85Ni0.15MnSb
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- Role of defects and disorder in the half-metallic full-Heusler compounds