Anomalous Hall effect and current spin polarization in CoFeX (X = Al, Ga, In, Si, Ge, and Sn) Heusler compounds: A systematic {\it ab initio} study
arXiv:1503.00204 · doi:10.1103/PhysRevB.91.134409
Abstract
In this paper, we perform a systematic {\it ab initio} study of two principal spin-related phenomena, namely, anomalous Hall effect and current spin polarization, in CoFe-based Heusler compounds CoFeX (X = Al, Ga, In, Si, Ge, Sn) within the generalized gradient approximation (GGA). The accurate full-potential linearized augmented plane-wave method is used. We find that the spin-polarization of the longitudinal current () in CoFeX (X = Al, Ga, In, AlSi and Sn) is 100 \% even though that of the electronic states at the Fermi level () is not. Further, the other compounds also have a high current spin polarization with \%. This indicates that all the CoFeX compounds considered are promising for spin-transport devices. Interestingly, is negative in CoFeX (X = Si, Ge and Sn), differing in sign from the as well as that from the transport experiments. Secondly, the calculated anomalous Hall conductivities (AHCs) are moderate, being within 200 S/cm, and agree well with the available experiments on highly L2 ordered CoFeSi specimen although they differ significantly from the reported experiments on other compounds where the B2 antisite disorders were present. Surprisingly, the AHC in CoFeSi decreases and then changes sign when Si is replaced by Ge and finally by Sn. Third, the calculated total magnetic moments agree well with the corresponding experimental ones in all the studied compounds except CoFeSi where a difference of 0.3 /f.u. exists. We also perform the GGA plus on-site Coulomb interaction calculations in the GGA+ scheme. We find that including the affects the calculated total magnetic moment, spin polarization and AHC significantly, and in most cases, results in a disagreement with the available experimental results.
arXiv admin note: text overlap with arXiv:1303.0509
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