Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide

S. Yamada, K. Tanikawa, M. Miyao +1

We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obt…