activity
20112015
most citedElectric-field control of spin accumulation signals in silicon at room temperature

60 citations · 192 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2015

Direct Observation of Ferromagnetic State in Gold Nanorods Probed using Electron Spin Resonance Spectroscopy

Yuji Inagaki, Tatsuya Kawae, Natsuko Sakai +3

X-band electron spin resonance (ESR) spectroscopy has been performed for gold nanorods (AuNRs) of four different sizes covered with a diamagnetic stabilizing component, cetyltrimet…

cond-mat.mtrl-sci2013★ 36 cited

Giant enhancement of spin pumping efficiency using Fe3Si ferromagnet

Y. Ando, K. Ichiba, S. Yamada +4

Spincurrentronics, which involves the generation, propagation and control of spin currents, has attracted a great deal of attention because of the possibility of realizing dissipat…

cond-mat.mtrl-sci2013★ 15 cited

Effect of Co-Fe substitutions on the room-temperature spin polarization in Co_3-xFe_xSi Heusler-compound films

K. Tanikawa, S. Oki, S. Yamada +3

Using low-temperature molecular beam epitaxy, we study substitutions of Fe atoms for Co ones in Co_3-xFe_xSi Heusler-compound films grown on Si and Ge. Even for the low-temperature…

cond-mat.mes-hall2012★ 35 cited

Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel

Y. Ando, K. Kasahara, S. Yamada +6

We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barr…

cond-mat.mes-hall2011★ 60 cited

Electric-field control of spin accumulation signals in silicon at room temperature

Y. Ando, Y. Maeda, K. Kasahara +8

We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/-Si con…

cond-mat.mes-hall2011★ 46 cited

Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces

K. Kasahara, S. Yamada, K. Sawano +2

The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the FeSi/Ge(111) heterostructure developed originally, we ca…