119 citations · 460 across the 10 of their papers we have counts for
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Electric-field control of spin accumulation signals in silicon at room temperature
Y. Ando, Y. Maeda, K. Kasahara +8
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/-Si con…
Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces
K. Kasahara, S. Yamada, K. Sawano +2
The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the FeSi/Ge(111) heterostructure developed originally, we ca…
Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
K. Kasahara, Y. Baba, K. Yamane +6
Using high-quality FeSi/-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an -type germanium (-Ge) channel. In the three- or two-terminal volta…
Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
Y. Ando, K. Kasahara, K. Yamane +6
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The…