Spin and charge transport in material with spin-dependent conductivity

Abstract

The spin and charge transport in materials with spin-dependent conductivity has been studied. It was shown that there is a charge accumulation along spin diffusion in a ferromagnetic metal, which causes a shortening of the spin diffusion length. It was shown that there is a substantial interaction between the drift and diffusion currents in semiconductors. The effects of gain/damping of a spin current by a charge current and the existence of a threshold spin current in a semiconductor were described. Because of the substantial magnitude, these new spintronics effect might be used for new designs of efficient spintronic devices. The influence of a spin drain on spin transport was discussed.

22 pages, 11 figures

References in corpus (3)

• Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
• Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium
• Spin Accumulation at Ferromagnet/Non-magnetic Material Interfaces

Cited by in corpus (5)

• Piezospintronic effect in honeycomb antiferromagnets
• Doping of Ga in antiferromagnetic semiconductor alpha-Cr2O3oxide and its effects on modified magnetic and electronic properties
• Towards fully two-dimensional spintronic devices
• Spin transport of electrons and holes in a metal and in a semiconductor
• Spin-polarized currents driven by spin-dependent surface screening