Spincaloritronic signal generation in non-degenerate Si
arXiv:1708.07108 · doi:10.1103/PhysRevApplied.9.054002
Abstract
Spincaloritronic signal generation due to thermal spin injection and spin transport is demonstrated in a non-degenerate Si spin valve. The spin-dependent Seebeck effect is used for the spincaloritronic signal generation, and the thermal gradient of about 200 mK at an interface of Fe and Si enables generating a spin voltage of 8 μV at room temperature. A simple expansion of a conventional spin drift-diffusion model with taking into account the spin-dependent Seebeck effect shows semiconductor materials are quite potential for the spincaloritronic signal generation comparing with metallic materials, which can allow efficient heat recycling in semiconductor spin devices.
arXiv comment17 pages, 4 figures, Supplemental Materials
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