34 citations · 34 across the 2 of their papers we have counts for
6 papers
Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
Takayuki Tahara, Yuichiro Ando, Makoto Kameno +7
A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 Ω, was measured by means of the local three-terminal magnetoresistance in nondegener…
Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio
Takayuki Tahara, Hayato Koike, Makoto Kameno +5
We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at roo…
Spin transport in non-degenerate Si with a spin MOSFET structure at room temperature
Tomoyuki Sasaki, Yuichiro Ando, Makoto Kameno +5
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room te…
Spin Drift in Highly Doped n-type Si
Makoto Kameno, Yuichiro Ando, Teruya Shinjo +5
A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detectio…
An investigation of the inverted Hanle effect in highly-doped Si
Yasunori Aoki, Makoto Kameno, Yuichiro Ando +7
The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature.…
The effect of spin drift on spin accumulation voltages in highly-doped Si
Makoto Kameno, Eiji Shikoh, Teruya Shinjo +5
An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. Th…