14 citations · 63 across the 6 of their papers we have counts for
6 papers
Role of the chiral spin configuration in field-free spin-orbit torque-induced magnetization switching by a locally injected spin current
Suhyeok An, Hyeong-Joo Seo, Eunchong Baek +2
For deterministic magnetization switching by spin-orbit torque (SOT) in a perpendicular magnetic anisotropy system, an additional in-plane direction magnetic field is essential for…
Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
H. Koike, S. Lee, R. Ohshima +7
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger loc…
Investigation of gating effect in Si spin MOSFET
Soobeom Lee, Fabien Rortais, Ryo Ohshima +6
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivi…
Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature
R. Ishihara, Y. Ando, S. Lee +5
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundame…
Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve
Soobeom Lee, Fabien Rortais, Ryo Ohshima +5
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations…
Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
Soobeom Lee, Naoto Yamashita, Yuichiro Ando +4
The temperature evolution of spin relaxation time, τsf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. τsf at 300 K…