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cond-mat.mtrl-sci2011★ 33 cited
The effect of spin drift on spin accumulation voltages in highly-doped Si
Makoto Kameno, Eiji Shikoh, Teruya Shinjo +5
An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. Th…
cond-mat.mtrl-sci2011★ 2 cited
Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method
M. Kameno, E. Shikoh, T. Oikawa +4
We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect…
cond-mat.mtrl-sci2011★ 188 cited
Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
Toshio Suzuki, Tomoyuki Sasaki, Tohru Oikawa +2
We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with…