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20142020
most citedOver 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

14 citations

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physics.app-ph2019★ 9 cited

Investigation of gating effect in Si spin MOSFET

Soobeom Lee, Fabien Rortais, Ryo Ohshima +6

A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivi…