35 citations · 93 across the 4 of their papers we have counts for
4 papers
Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
K. Hamaya, Y. Ando, K. Masaki +5
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in…
Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
Y. Ando, K. Kasahara, S. Yamada +6
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barr…
Band gap unification of partially Si-substituted single wall carbon nanotubes
Pavel V. Avramov, Pavel B. Sorokin, Alexander S. Fedorov +2
The atomic and electronic structure of a set of pristine single wall SiC nanotubes as well as Si-substituted carbon nanotubes and a SiC sheet was studied by the LDA plane wave band…
The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires
Pavel V. Avramov, Alexander A. Kuzubov, Alexander S. Fedorov +3
The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable…