60 citations · 116 across the 4 of their papers we have counts for
4 papers
Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
K. Hamaya, Y. Ando, K. Masaki +5
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in…
Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces
Y. Ando, S. Yamada, K. Kasahara +4
We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoF…
Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
Y. Ando, K. Kasahara, S. Yamada +6
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barr…
Electric-field control of spin accumulation signals in silicon at room temperature
Y. Ando, Y. Maeda, K. Kasahara +8
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/-Si con…