Correspondence: Reply to "On the understanding of current-induced spin polarization of 3D topological insulators"

Abstract

We reported the first spin potentiometric measurement to electrically detect spin polarization arising from spin-momentum locking in topological insulator (TI) surface states using ferromagnet/tunnel barrier contacts [1]. This method has been adopted to measure the current generated spin in other TI systems [2-10], albeit with conflicting signs of the measured spin voltage [1,2,4,6-10]. Tian et al. wish to use their model as presented in Ref. [4] to determine the sign of the induced spin polarization, and thereby determine whether the claims of various groups to have sampled the topologically protected surface states in bulk TIs are correct. The central point of our Reply is that the model as presented is incapable of doing so because it fails to include separate physical contributions which independently effect the sign of the spin polarization measured.

arXiv comment11 pages, 2 figures. arXiv admin note: substantial text overlap with arXiv:1810.00757

References in corpus (6)

• Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3
• Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators
• Electrical injection and detection of spin-polarized currents in topological insulator Bi2Te2Se
• Mapping the chemical potential dependence of current-induced spin polarization in a topological insulator
• Switching of Charge-Current-Induced Spin Polarization in the Topological Insulator BiSbTeSe2
• Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states

Cited by in corpus (2)

• Resonant Tunneling Anisotropic Magnetoresistance Induced by Magnetic Proximity
• Interplay between Topological States and Rashba States as Manifested on Surface Steps at Room Temperature