169 citations · 257 across the 8 of their papers we have counts for
8 papers
Rapid Exchange Cooling with Trapped Ions
Spencer D. Fallek, Vikram S. Sandhu, Ryan A. McGill +4
The trapped-ion quantum charge-coupled device (QCCD) architecture is a leading candidate for advanced quantum information processing. In current QCCD implementations, imperfect ion…
Characterization of Fast Ion Transport via Position-Dependent Optical Deshelving
Craig R. Clark, Creston D. Herold, J. True Merrill +11
Ion transport is an essential operation in some models of quantum information processing, where fast ion shuttling with minimal motional excitation is necessary for efficient, high…
Transport-enabled entangling gate for trapped ions
Holly N. Tinkey, Craig R. Clark, Brian C. Sawyer +1
We implement a two-qubit entangling Mølmer-Sørensen interaction by transporting two co-trapped ions through a stationary, bichromatic optical beam within a s…
High-Fidelity Bell-State Preparation with Ca Optical Qubits
Craig R. Clark, Holly N. Tinkey, Brian C. Sawyer +10
Entanglement generation in trapped-ion systems has relied thus far on two distinct but related geometric phase gate techniques: Molmer-Sorensen and light-shift gates. We recently p…
Quantum process tomography of a Mølmer-Sørensen gate via a global beam
Holly N Tinkey, Adam M Meier, Craig R Clark +2
We present a framework for quantum process tomography of two-ion interactions that leverages modulations of the trapping potential and composite pulses from a global laser beam to…
Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions
Ian Appelbaum, Holly N. Tinkey, Pengke Li
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-depende…
Inelastic electron tunneling spectroscopy of local "spin accumulation" devices
Holly N. Tinkey, Pengke Li, Ian Appelbaum
We investigate the origin of purported "spin accumulation" signals observed in local "three-terminal" (3T) measurements of ferromagnet/insulator/n-Si tunnel junctions using inelast…
Structure and electronic properties of epitaxial graphene grown on SiC
M. Sprinkle, J. Hicks, A. Tejeda +11
We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the unders…