Analysis of quantum coherence in bismuth-doped silicon: a system of strongly coupled spin qubits

Abstract

There is growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied proposals for silicon based quantum information processing (QIP) using phosphorus-doped silicon (Si:P). We focus here on the implications of its anomalously strong hyperfine coupling. In particular, we analyse in detail the regime where recent pulsed magnetic resonance experiments have demonstrated the potential for orders of magnitude speedup in quantum gates by exploiting transitions that are electron paramagnetic resonance (EPR) forbidden at high fields. We also present calculations using a phenomenological Markovian master equation which models the decoherence of the electron spin due to Gaussian temporal magnetic field perturbations. The model quantifies the advantages of certain "optimal working points" identified as the $df/dB=0$ regions, where $f$ is the transition frequency, which come in the form of frequency minima and maxima. We show that at such regions, dephasing due to the interaction of the electron spin with a fluctuating magnetic field in the $z$ direction (usually adiabatic) is completely removed.

15 pages, 9 figures

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• Solid state quantum memory using the 31P nuclear spin
• Quantum many-body theory of qubit decoherence in a finite-size spin bath
• Entanglement in a Solid State Spin Ensemble
• Coherent Control of Rydberg States in Silicon
• Bismuth in silicon qubits: the role of EPR cancellation resonances
• Long spin coherence in silicon with an electrical spin trap readout
• Optically detected NMR of optically hyperpolarized 31P neutral donors in 28Si
• Optical Detection of a Single Nuclear Spin
• Electrically detected spin echoes of donor nuclei in silicon

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• Cavity Magnon Polaritons with Lithium Ferrite and 3D Microwave Resonators at milli-Kelvin Temperatures
• Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si
• The classical nature of nuclear spin noise near clock transitions of Bi donors in silicon
• Optimizing surface defects for atomic-scale electronics: Si dangling bonds
• Decoherence of nuclear spins in the "frozen core" of an electron spin
• Measuring central-spin interaction with a spin bath by pulsed ENDOR: Towards suppression of spin diffusion decoherence
• In-Plane Magnetic Field Tolerance of a Dispersive Aluminum Nanobridge SQUID Magnetometer
• Cluster-correlation expansion for studying decoherence of clock transitions in spin baths
• Keeping a spin qubit alive in natural silicon: Comparing optimal working points and dynamical decoupling
• Spin-dependent recombination involving oxygen-vacancy complexes in silicon
• Pulsed Low-Field Electrically Detected Magnetic Resonance
• Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
• Preparation of quantum states of two spin-$\frac{1}{2}$ particles in the form of the Schmidt decomposition
• Addressing spin transitions on 209Bi donors in silicon using circularly-polarized microwaves
• Implementation of a two-qubit state by an auxiliary qubit on the three-spin system