Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields
arXiv:1208.2313 · doi:10.1063/1.4747723
Abstract
Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated.
arXiv comment5 pages, 4 figures
References in corpus (9)
- Coherent Quantum Dynamics of a Superconducting Flux Qubit
- Coherent coupling of a superconducting flux-qubit to an electron spin ensemble in diamond
- Initializing, manipulating and storing quantum information with bismuth dopants in silicon
- Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si
- Bismuth in silicon qubits: the role of EPR cancellation resonances
- Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
- Hyperfine structure and nuclear hyperpolarization observed in the bound exciton luminescence of Bi donors in natural Si
- Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon
- Nuclear Spin Dynamics of Ionized Phosphorus Donors in Silicon