activity
20122020
most citedSpin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields

11 citations · 11 across the 1 of their papers we have counts for

collaborators

8 papers

physics.app-ph2020

Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides

Sanjoy Kumar Nandi, Sujan Kumar Das, Caleb Estherby +2

Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current em…

physics.app-ph2019

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbOx

Shimul Kanti Nath, Sanjoy Kumar Nandi, Shuai Li +1

Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particula…

physics.app-ph2019

Schottky barrier induced asymmetry in the negative differential resistance response of Nb/NbOx/Pt cross-point devices

Shimul Kanti Nath, Sanjoy Kumar Nandi, Assaad El-Helou +5

The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers…

cond-mat.mtrl-sci2019

Electric field and current induced electroforming modes in NbOx

Sanjoy Kumar Nandi, Shimul Kanti Nath, Assaad El Helou +4

Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresis…

physics.app-ph2019

Origin of current-controlled negative differential resistance modes and the emergence of composite characteristics with high complexity

Shuai Li, Xinjun Liu, Sanjoy Kumar Nandi +2

Current-controlled negative differential resistance has significant potential as a fundamental building block in brain-inspired neuromorphic computing. However, achieving desired n…

physics.app-ph2019

Current localisation and redistribution as the basis of discontinuous current controlled negative differential resistance in NbOx

Sanjoy Kumar Nandi, Shimul Kanti Nath, Assaad El Helou +4

In-situ thermo-reflectance imaging is used to show that the discontinuous, snap-back mode of current-controlled negative differential resistance (CC-NDR) in NbOx-based devices is a…