69 citations · 271 across the 12 of their papers we have counts for
12 papers
High-Mobility Indium Native Oxide Transistors via Liquid-Metal Printing in Air
Shi-Rui Zhang, Sanjoy Kumar Nandi, Felipe Kremer +8
Oxide semiconductors have emerged as common channel materials in transistors and hold promise for next-generation electronics, yet achieving high mobility typically requires costly…
A balanced Memristor-CMOS ternary logic family and its application
Xiao-Yuan Wang, Jia-Wei Zhou, Chuan-Tao Dong +5
The design of balanced ternary digital logic circuits based on memristors and conventional CMOS devices is proposed. First, balanced ternary minimum gate TMIN, maximum gate TMAX an…
Characterization and modeling of spiking and bursting in experimental NbOx neuron
Marie Drouhin, Shuai Li, Matthieu Grelier +7
Hardware spiking neural networks hold the promise of realizing artificial intelligence with high energy efficiency. In this context, solid-state and scalable memristors can be used…
Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides
Sanjoy Kumar Nandi, Sujan Kumar Das, Caleb Estherby +2
Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current em…
Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbOx
Shimul Kanti Nath, Sanjoy Kumar Nandi, Shuai Li +1
Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particula…
Schottky barrier induced asymmetry in the negative differential resistance response of Nb/NbOx/Pt cross-point devices
Shimul Kanti Nath, Sanjoy Kumar Nandi, Assaad El-Helou +5
The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers…
Electric field and current induced electroforming modes in NbOx
Sanjoy Kumar Nandi, Shimul Kanti Nath, Assaad El Helou +4
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresis…
Origin of current-controlled negative differential resistance modes and the emergence of composite characteristics with high complexity
Shuai Li, Xinjun Liu, Sanjoy Kumar Nandi +2
Current-controlled negative differential resistance has significant potential as a fundamental building block in brain-inspired neuromorphic computing. However, achieving desired n…
Current localisation and redistribution as the basis of discontinuous current controlled negative differential resistance in NbOx
Sanjoy Kumar Nandi, Shimul Kanti Nath, Assaad El Helou +4
In-situ thermo-reflectance imaging is used to show that the discontinuous, snap-back mode of current-controlled negative differential resistance (CC-NDR) in NbOx-based devices is a…
Detection and spatial mapping of conductive filaments in metal/oxide/metal cross-point devices
Shimul Kanti Nath, Sanjoy Kumar Nandi, Shuai Li +1
A simple means of detecting and spatially mapping volatile and nonvolatile conductive filaments in metal/oxide/metal cross-point devices is introduced and its application demonstra…
Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination
Pierre-André Mortemousque, Simon Berger, Takeharu Sekiguchi +3
Bismuth donors ion-implanted in Si and Si are studied using magnetic resonance spectroscopy based on spin dependent recombination. The hyperfine clock transitio…
Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields
P. A. Mortemousque, T. Sekiguchi, C. Culan +4
Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. T…