173 citations · 346 across the 9 of their papers we have counts for
9 papers
Controlling spin relaxation with a cavity
A. Bienfait, J. J. Pla, Y. Kubo +9
Spontaneous emission of radiation is one of the fundamental mechanisms by which an excited quantum system returns to equilibrium. For spins, however, spontaneous emission is genera…
Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
M. Urdampilleta, A. Chatterjee, C. C. Lo +7
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semi…
Stark shift and field ionization of arsenic donors in Si-SOI structures
C. C. Lo, S. Simmons, R. Lo Nardo +8
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic d…
Microwave manipulation of electrically injected spin polarized electrons in silicon
C. C. Lo, J. Li, I. Appelbaum +1
We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic meta…
Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
C. D. Weis, C. C. Lo, V. Lang +7
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated…
Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas
C. C. Lo, V. Lang, R. E. George +5
We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X- (GHz) and W-band (GHz) mic…
Critical issues in the formation of quantum computer test structures by ion implantation
T. Schenkel, C. C. Lo, C. D. Weis +3
The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the deve…
Mapping of ion beam induced current changes in FinFETs
C. D. Weis, A. Schuh, A. Batra +8
We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20…
Detection of low energy single ion impacts in micron scale transistors at room temperature
A. Batra, C. D. Weis, J. Reijonen +5
We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures ar…