Interplay among spin, orbital effects and localization in a GaAs two-dimensional electron gas in a strong in-plane magnetic field

Abstract

The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization of the carriers shifts down by more than 20 T as the electron density is reduced, consistent with recent theories taking into account the enhancement of the electron-electron interactions at low densities. Nevertheless, the magnetic field for complete polarization, Bp, remains 2-3 times smaller than predicted for a disorder free system. We show, in particular by studying the temperature dependance of Bp to probe the effective size of the Fermi sea, that localization plays an important role in determining the spin polarization of a 2D electron gas.

Published in the Physical Review B

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• Magnetotransport in single layer graphene in a large parallel magnetic field
• Colossal magnetoresistance in an ultra-clean weakly interacting 2D Fermi liquid
• High magnetic field induced charge density waves and sign reversal of the Hall coefficient in graphite
• Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells
• Measurement of spin-dependent conductivities in a two-dimensional electron gas