On the Electron-Electron Interactions in Two Dimensions

Abstract

In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective spin susceptibility, effective mass, and g*-factor. We found a good agreement among the data obtained for different 2D electron systems by several experimental teams using different measuring techniques. We conclude that the renormalization is not strongly affected by the material or sample-dependent parameters such as the potential well width, disorder (the carrier mobility), and the bare (band) mass. We demonstrate that the apparent disagreement between the reported results on various 2D electron systems originates mainly from different interpretations of similar "raw" data. Several important issues should be taken into account in the data processing, among them the dependences of the effective mass and spin susceptibility on the in-plane field, and the temperature dependence of the Dingle temperature. The remaining disagreement between the data for various 2D electron systems, on one hand, and the 2D hole system in GaAs, on the other hand, may indicate more complex character of electron-electron interactions in the latter system.

Added refs; corrected typos. 19 pages, 7 figures. To be published in: Chapter 19, Proceedings of the EURESCO conference "Fundamental Problems of Mesoscopic Physics ", Granada, 2003

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Cited by in corpus (4)

• Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers
• Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition
• Two-loop renormalization of the Finkel'stein theory: The specific heat
• Charge Transport in a Spin-Polarized 2D Electron System in Silicon